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2SC4596 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4596 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC4596 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V (Min) ·Complement to Type 2SA1757 APPLICATIONS ·Designed for high speed and power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A Collector Power Dissipation @ TC=25℃ 25 PC Collector Power Dissipation @ Ta=25℃ 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn |
Numéro de pièce similaire - 2SC4596 |
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Description similaire - 2SC4596 |
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