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2SC4596 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce 2SC4596
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC4596 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4596
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 3A ; IB= 0.3A, L= 1mH
60
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC= 50μA; IE= 0
100
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50μA; IC= 0
5
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 3A; IB= 0.15A
B
0.3
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 4A; IB= 0.2A
B
0.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 3A; IB= 0.15A
B
1.2
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 4A; IB= 0.2A
B
1.5
V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10
μA
hFE
DC Current Gain
IC= 1A ; VCE= 2V
100
320
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V
120
MHz
COB
Output Capacitance
IE=0; VCB= 10V; ftest= 1.0MHz
80
pF
Switching times
ton
Turn-on Time
0.3
μs
tstg
Storage Time
1.5
μs
tf
Fall Time
IC= 3A ; IB1= -IB2= 0.15A
RL= 10Ω;VCC≈ 30V
0.3
μs
hFE classifications
E
F
100-200
160-320
isc Website：www.iscsemi.cn
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