2N6497 datasheet(1/2 Pages) ISC

No de pièce	2N6497

Description	isc Silicon NPN Power Transistors

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Power Transistors

2N6497/6498/6499

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

:

VCEO(SUS)= 250V(Min)- 2N6497

= 300V(Min)- 2N6498

= 350V(Min)- 2N6499

·DC Current Gain-

: hFE= 10-75@IC= 2.5A

APPLICATIONS

·Designed for high voltage inverters, switching regulators

and line operated amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

2N6497

350

2N6498

400

VCBO

Collector-Base Voltage

2N6499

450

V

2N6497

250

2N6498

300

VCEO

Collector-Emitter Voltage

2N6499

350

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

10

A

IB

Base Current

2

A

PD

Total Power Dissipation@TC=25℃

80

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Rresistance,Junction to Case

1.56

℃/W

Numéro de pièce similaire - 2N6497

Fabricant	No de pièce	Fiches technique	Description
Mospec Semiconductor	2N6497	179Kb / 4P	POWER TRANSISTORS(5A,80W)
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Boca Semiconductor Corp...	2N6497	185Kb / 4P	HIGH VOLTAGE NPN SILICON POWER TRANSISTORS
ON Semiconductor	2N6497	64Kb / 8P	High Voltage NPN Silicon Power Transistors April, 2002 ??Rev. 11
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