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2N6497 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6497 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon NPN Power Transistors 2N6497/6498/6499 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT 2N6497 250 2N6498 300 VCEO(SUS) Collector-Emitter Sustaining Voltage 2N6499 IC= 25mA; IB= 0 350 V 2N6497 1.0 2N6498 1.25 VCE(sat)-1 Collector-Emitter Saturation Voltage 2N6499 IC= 2.5A; IB= 0.5A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 2A 5.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 5A; IB= 2A 2.5 V 2N6497 VCE= 350V;VBE(off)= 1.5V VCE= 175V;VBE(off)= 1.5V ;TC=100℃ 1.0 10 2N6498 VCE= 400V;VBE(off)= 1.5V VCE= 200V;VBE(off)= 1.5V ;TC=100℃ 1.0 10 ICEX Collector Cutoff Current 2N6499 VCE= 450V;VBE(off)= 1.5V VCE= 225V;VBE(off)= 1.5V ;TC=100℃ 1.0 10 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 2.5A ; VCE= 10V 10 75 hFE-2 DC Current Gain IC= 5A ; VCE= 10V 3 fT Current-Gain —Bandwidth Product IC= 0.25A;VCE= 10V;ftest=1.0MHz 5 MHz Switching Times;Duty Cycle≤2% tr Rise Time 1.0 μs tS Storage Time 2.5 μs tf Fall Time VCC= 125V,tp= 0.1ms IC=2.5A;IB1= -IB2=0.5 A 1.0 μs |
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