2N6486 datasheet(1/3 Pages) ISC

No de pièce	2N6486

Description	Silicon NPN Power Transistors

PDF	3 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6486 2N6487 2N6488

DESCRIPTION

・With TO-220 package

・Excellent safe operating area

・Complement to type 2N6489 2N6490

2N6491 respectively

APPLICATIONS

・Power amplifier and medium speed

switching applications

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6486

50

2N6487

70

VCBO

Collector-base voltage

2N6488

Open emitter

90

V

2N6486

40

2N6487

60

VCEO

Collector-emitter voltage

2N6488

Open base

80

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

15

A

IB

Base current

5

A

PT

Total power dissipation

TC=25℃

75

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance from junction to case

1.67

℃/W

Numéro de pièce similaire - 2N6486

Fabricant	No de pièce	Fiches technique	Description
Mospec Semiconductor	2N6486	190Kb / 4P	POWER TRANSISTORS(15A,75W)
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List of Unclassifed Man...	2N6486	347Kb / 8P	Power Transistors
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Description similaire - 2N6486

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Motorola, Inc	BUS47	79Kb / 2P	NPN SILICON POWER TRANSISTORS
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2N6486 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

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