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2N6486 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N6486 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N6486 2N6487 2N6488 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N6486 40 2N6487 60 VCEO(SUS) Collector-emitter sustaining voltage 2N6488 IC=0.2A ;IB=0 80 V VCEsat-1 Collector-emitter saturation voltage IC=5A;IB=0.5A 1.3 V VCEsat-2 Collector-emitter saturation voltage IC=15A;IB=5A 3.5 V VBE-1 Base-emitter on voltage IC=5A ; VCE=4V 1.3 V VBE-2 Base-emitter on voltage IC=15A ; VCE=4V 3.5 V 2N6486 VCE=45V; VCE=40V;TC=150℃ 0.5 5.0 2N6487 VCE=65V; VCE=60V;TC=150℃ 0.5 5.0 ICEX Collector cut-off current VBE=-1.5V 2N6488 VCE=85V; VCE=80V;TC=150℃ 0.5 5.0 mA 2N6486 VCE=20V;IB=0 2N6487 VCE=30V;IB=0 ICEO Collector cut-off current 2N6488 VCE=40V;IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=4V 20 150 hFE-2 DC current gain IC=15A ; VCE=4V 5 |
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