IPW60R165CP_08 datasheet(1/11 Pages) INFINEON

No de pièce	IPW60R165CP

Description	CoolMOS짰 Power Transistor Features Lowest figure-of-merit RONxQg Ultra low gate charge

PDF	11 Pages

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Fabricant	INFINEON [Infineon Technologies AG]

Site Internet	http://www.infineon.com

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IPW60R165CP

CoolMOS

® Power Transistor

Features

• Lowest figure-of-merit RONxQg

• Ultra low gate charge

• Extreme dv/dt rated

• High peak current capability

• Qualified according to JEDEC

1) for target applications

• Pb-free lead plating; RoHS compliant

CoolMOS CP is specially designed for:

• Hard switching topologies, for Server and Telecom

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

I D

T C=25 °C

A

T C=100 °C

Pulsed drain current

2)

I D,pulse

T C=25 °C

Avalanche energy, single pulse

E AS

I D=7.9 A, V DD=50 V

522

mJ

Avalanche energy, repetitive t AR

2),3)

E AR

I D=7.9 A, V DD=50 V

Avalanche current, repetitive t AR

2),3)

I AR

A

MOSFET dv /dt ruggedness

dv /dt

V DS=0...480 V

V/ns

Gate source voltage

V GS

static

V

AC (f >1 Hz)

Power dissipation

P tot

T C=25 °C

W

Operating and storage temperature

T j, T stg

°C

Mounting torque

M3 and M3.5 screws

60

Ncm

±30

192

-55 ... 150

0.79

7.9

50

±20

Value

21

13

61

V DS @ Tj,max

650

V

R DS(on),max

0.165

Ω

Q g,typ

39

nC

Product Summary

Type

Package

Ordering Code

Marking

IPW60R165CP

PG-TO247-3

SP000095483

6R165P

PG-TO247-3

Rev. 2.2

page 1

2008-02-18

Please note the new package dimensions arccording to PCN 2009-134-A

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