BAS101S datasheet(1/11 Pages) NXP

No de pièce	BAS101S

Description	High-voltage switching diodes

PDF	11 Pages

Scroll/Zoom	100%

Fabricant	NXP [NXP Semiconductors]

Site Internet	http://www.nxp.com

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1 / 11 page

1.

Product profile

1.1 General description

High-voltage switching diodes, encapsulated in a SOT23 small Surface-Mounted

Device (SMD) plastic package.

1.2 Features

1.3 Applications

1.4 Quick reference data

[1]

When switched from IF = 30 mA to IR =30mA; RL = 100 Ω; measured at IR =3mA.

BAS101; BAS101S

High-voltage switching diodes

Rev. 02 — 14 December 2009

Product data sheet

Table 1.

Product overview

Type number

Package

Configuration

NXP

JEITA

BAS101

SOT23

-

single

BAS101S

SOT23

-

dual series

High switching speed: trr ≤ 50 ns

Low capacitance: Cd ≤ 2pF

Low leakage current

Reverse voltage: VR ≤ 300 V

Repetitive peak reverse voltage:

VRRM ≤ 300 V

Small SMD plastic package

High-speed switching

Voltage clamping

High-voltage switching

Reverse polarity protection

Table 2.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

IF

forward current

-

200

mA

IR

reverse current

VR = 250 V

-

150

nA

VR

reverse voltage

-

300

V

trr

reverse recovery time

[1] --50

ns

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