BAS101S datasheet(6/11 Pages) NXP

6 / 11 page

BAS101_BAS101S_2

Product data sheet

Rev. 02 — 14 December 2009

6 of 11

NXP Semiconductors

BAS101; BAS101S

High-voltage switching diodes

Test information

Package outline

10. Packing information

[1]

For further information and the availability of packing methods, see Section 15.

(1) IR =3mA

Fig 5.

Reverse recovery time test circuit and waveforms

trr

(1)

+ IF

output signal

10 %

90 %

input signal

V = VR + IF × RS

RS = 50 Ω

D.U.T.

Ri = 50 Ω

SAMPLING

OSCILLOSCOPE

mga881

Fig 6.

Package outline SOT23 (TO-236AB)

04-11-04

Dimensions in mm

0.45

0.15

1.9

1.1

0.9

3.0

2.8

2.5

2.1

1.4

1.2

0.48

0.38

0.15

0.09

Table 9.

Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.[1]

Type number Package

Description

Packing quantity

3000

10000

BAS101

SOT23

4 mm pitch, 8 mm tape and reel

-215

-235

BAS101S

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