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RRL035P03 Fiches technique(PDF) 1 Page - Rohm

No de pièce RRL035P03
Description  4V Drive Pch MOSFET
PDF  6 Pages
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Fabricant  ROHM [Rohm]
Site Internet  http://www.rohm.com
Logo ROHM - Rohm

RRL035P03 Fiches technique(HTML) 1 Page - Rohm

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4V Drive Pch MOSFET
RRL035P03
Structure
Dimensions (Unit : mm)
Silicon P-channel MOSFET
Features
1) Low On-resistance.
2) High speed switching.
Application
Switching
Packaging specifications
Inner circuit
Package
Taping
Code
TR
Basic ordering unit (pieces)
3000
RRL035P03
○
Absolute maximum ratings (Ta = 25
C)
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
20
V
Continuous
ID
3.5
A
Pulsed
IDP
14
A
Continuous
IS
0.8
A
Pulsed
ISP
14
A
Power dissipation
PD
1W
Channel temperature
Tch
150
C
Range of storage temperature
Tstg
55 to +150
C
*1 Pw
10s, Duty cycle1%
*2 Mounted on a ceramic board.
Thermal resistance
Symbol
Limits
Unit
Channel to Ambient
Rth (ch-a)
125
C / W
*Mounted on a ceramic board.
Parameter
Type
Source current
(Body Diode)
Drain current
Parameter
*
(1) Drain
(2) Drain
(3) Gate
(4) Source
(5) Drain
(6) Drain
∗
1 ESD PROTECTION DIODE
∗
2 BODY DIODE
TUMT6
Abbreviated symbol :UF
*2
*1
*1
∗2
∗1
(6)
(1)
(5)
(2)
(4)
(3)
1/5
2010.04 - Rev.A
www.rohm.com
©20
10 ROHM Co., Ltd. All rights reserved.


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