RRL035P03 datasheet(2/6 Pages) ROHM

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RRL035P03



Electrical characteristics (Ta = 25

C)

Symbol

Min.

Typ.

Max.

Unit

Gate-source leakage

IGSS

10

AVGS=20V, VDS=0V

Drain-source breakdown voltage V(BR)DSS

30

ID=1mA, VGS=0V

Zero gate voltage drain current

IDSS

1

AVDS=30V, VGS=0V

Gate threshold voltage

VGS (th)

1.0

2.5

VDS=10V, ID=1mA

-36

ID=3.5A, VGS=10V

-52

ID=1.7A, VGS=4.5V

-58

ID=1.7A, VGS=4.0V

Forward transfer admittance

l Yfs l

2.3

ID=3.5A, VDS=10V

Input capacitance

Ciss

800

VDS=10V

Output capacitance

Coss

120

VGS=0V

Reverse transfer capacitance

Crss

110

f=1MHz

Turn-on delay time

td(on)

-7

ID=1.7A, VDD 15V

Rise time

-9

VGS=10V

Turn-off delay time

td(off)

RL=8.8

Fall time

RG=10

Total gate charge

8.0

nC ID=3.5A, VDD 15V

Gate-source charge

Qgs

2.5

nC VGS=5V RL=4.3

Gate-drain charge

Qgd

3.0

nC RG=10

*Pulsed



Body diode characteristics (Source-Drain) (Ta = 25

C)

Symbol

Min.

Typ.

Max. Unit

Forward Voltage

VSD

1.2

Is=3.5A, VGS=0V

*Pulsed

Conditions



Parameter

Static drain-source on-state

resistance

RDS (on)

2/5

2010.04 - Rev.A

Data Sheet

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