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STM8S207MB Fiches technique(PDF) 67 Page - STMicroelectronics |
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STM8S207MB Fiches technique(HTML) 67 Page - STMicroelectronics |
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67 / 103 page ![]() STM8S207xx, STM8S208xx Electrical characteristics Doc ID 14733 Rev 9 67/103 10.3.4 Internal clock sources and timing characteristics Subject to general operating conditions for VDD and TA. fHSE High speed internal RC oscillator (HSI) Figure 18. Typical HSI frequency variation vs VDD at 4 temperatures Table 33. HSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency 16 MHz ACCHSI Accuracy of HSI oscillator Trimmed by the CLK_HSITRIMR register for given VDD and TA conditions -1(1) 1. Guaranteeed by design, not tested in production. 1(1) % Accuracy of HSI oscillator (factory calibrated) VDD = 5 V, TA = 25 °C -1.5 1.5 VDD = 5 V, 25 °C ≤ TA ≤ 85 °C -2.2 2.2 2.95 V ≤ VDD ≤ 5.5 V, -40 °C ≤ TA ≤ 125 °C -3(2) 2. Data based on characterization results, not tested in production 3(2) tsu(HSI) HSI oscillator wakeup time including calibration 1(1) µs IDD(HSI) HSI oscillator power consumption 170 250(2) µA -3% -2% -1% 0% 1% 2% 3% 2.5 3 3.5 4 4.5 5 5.5 6 -40˚C 25˚C 85˚C 125˚C ai15067 V DD (V) |
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