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AS4LC4M16DG-5S/XT Fiches technique(PDF) 23 Page - Austin Semiconductor |
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AS4LC4M16DG-5S/XT Fiches technique(HTML) 23 Page - Austin Semiconductor |
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23 / 25 page ![]() DRAM DRAM DRAM DRAM DRAM AS4LC4M16 AustinSemiconductor,Inc.reservestherighttochangeproductsorspecificationswithoutnotice. 23 AS4LC4M16 Rev. 1.1 6/05 Austin Semiconductor, Inc. SELF REFRESH CYCLE (Addresses and OE\ = DON’T CARE) NOTES: 1. Once t RASS (MIN) is met and RAS\ remains LOW, the DRAM will enter self refresh mode. 2. Once t RPS is satisfied, a complete burst of all rows should be executed if RAS\-only or burst CBR refresh is used. |
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