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TDF8599BTH Fiches technique(PDF) 35 Page - NXP Semiconductors

No de pièce TDF8599BTH
Description  I2C-bus controlled dual channel 43 W/4 W, single channel 85 W/1 W class-D power amplifier with load diagnostics
PDF  54 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

TDF8599BTH Fiches technique(HTML) 35 Page - NXP Semiconductors

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TDF8599B_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 29 July 2009
35 of 54
NXP Semiconductors
TDF8599B
I2C-bus controlled dual channel class-D power amplifier
14.2 Output power estimation (Parallel mode)
Figure 28 and Figure 29 show the estimated output power at THD = 0.5 % and
THD = 10 % as a function of the supply voltage for different load impedances in parallel
mode.
14.3 Output current limiting
The peak output current is internally limited to 8 A maximum. During normal operation, the
output current should not exceed this threshold level otherwise the output signal will be
distorted. The peak output current can be estimated using Equation 6:
(6)
• Io = output current (A)
• VP = supply voltage (V)
• RL = load impedance (Ω)
• RDSon = on-resistance of power switch (Ω)
• Rs = series resistance of output inductor (Ω)
Example: A 2
Ω speaker can be used with a supply voltage of 19 V before current limiting
is triggered.
Current limiting (clipping) avoids audio holes but can cause distortion similar to voltage
clipping. In Parallel mode, the output current is internally limited above 16 A.
THD = 0.5 %.
RDSon = 0.1 Ω (at Tj = 100 °C), Rs = 0.025 Ω,
tw(min) = 190 ns and IO(ocp) = 16 A (minimum).
(1) RL =1 Ω.
(2) RL =2 Ω.
(3) RL =4 Ω.
THD = 10 %.
RDSon = 0.1 Ω (at Tj = 100 °C), Rs = 0.025 Ω,
tw(min) = 190 ns and IO(ocp) = 16 A (minimum).
(1) RL =1 Ω.
(2) RL =2 Ω.
(3) RL =4 Ω.
Fig 28. Po as a function of VP in parallel mode with
THD = 0.5 %
Fig 29. Po as a function of VP parallel mode with
THD = 10 %
VP (V)
824
20
16
12
(1)
(2)
001aak227
90
30
60
120
150
Po
(W)
0
(3)
VP (V)
824
20
16
12
(1)
(3)
001aak228
60
120
180
30
90
150
Po
(W)
0
(2)
I
o
V
P
R
L
2
+
R
DSon
R
s
+
()
×
------------------------------------------------------
8A
[]
≤≤



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