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2SC3502 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited

No de pièce 2SC3502
Description  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC3502 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3502
DESCRIPTION
·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 200 V
·Complement to Type 2SA1380
APPLICATIONS
·Designed for ultrahigh-definition CRT display, video out-
put applicaitons
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200
V
VCEO
Collector-Emitter Voltage
200
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
0.1
A
ICM
Collector Current-Peak
0.2
A
Collector Power Dssipation
Ta=25℃
1.2
PC
Collector Power Dssipation
TC=25℃
5
W
Ti
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn


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