| Moteur de recherche de fiches techniques de composants électroniques |
|
2SC3502 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SC3502 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3502 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10μA ; IE= 0 200 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; RBE= ∞ 200 V V(BR)EBO Emitter-Base Breakdown Vltage IE= 10μA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA ;IB= 2mA B 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 20mA ;IB= 2mA B 1.0 V ICBO Collector Cutoff Current VCB= 150V; IE= 0 0.1 μA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.1 μA hFE DC Current Gain IC= 10m A ; VCE= 10V 40 320 fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 30V; 150 MHz COB Collector Capacitance IE= 0; VCB= 30V;ftest = 1MHz 1.7 pF hFE Classifications C D E F 40-80 60-120 100-200 160-320 isc Website:www.iscsemi.cn |
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |