2SA1116 datasheet(1/2 Pages) ISC

No de pièce	2SA1116

Description	isc Silicon PNP Power Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon PNP Power Transistor

2SA1116

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -200V(Min.)

·High Power Dissipation

·Complement to Type 2SC2607

APPLICATIONS

·Designed for general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-200

V

VCEO

Collector-Emitter Voltage

-200

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current-Continuous

-15

A

IB

Base Current-Continuous

-5

A

PC

Collector Power Dissipation

@TC=25℃

150

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

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