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2SA1116 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1116 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Website:www.iscsemi.cn isc Silicon PNP Power Transistor 2SA1116 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V ICBO Collector Cutoff Current VCB= -200V; IE= 0 -100 μA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -100 μA hFE DC Current Gain IC= -5A ; VCE= -4V 30 fT Current-Gain—Bandwidth Product IE= 0.5A; VCE= -12V 20 MHz Switching Times tr Rise Time 0.3 μs tstg Storage Time 0.9 μs tf Fall Time IC= -5A, RL= 12Ω, IB1= -IB2= -0.5A, VCC= -60V 0.2 μs |
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