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IL7809 Fiches technique(PDF) 9 Page - IK Semicon Co., Ltd |
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IL7809 Fiches technique(HTML) 9 Page - IK Semicon Co., Ltd |
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9 / 21 page IL78XX IL7815 ELECTRICAL CHARACTERISTICS (Refer to test circuit, Tmin<Tj<Tmax, Io=500mA, VI=23V, Ci=0.33 ㎌, Co=0.1 ㎌, unless otherwise sprcified) Characteristic Symbol Test condition Min. Typ. Max. Unit Tj = 25 ° C 14.4 15 15.6 Output Voltage Vo 5.0mA ≤Io ≤1.0A, PD ≤15W VI = 17.5V to 30V VI = 18.5V to 30V 14.25 15 15.75 V VI = 17.5V to 30V 11 300 Line Regulation ∆Vo Tj = 25 ° C VI = 20V to 26V 3 150 Io = 5.0mA to 1.5A 12 300 Load Regulation ∆Vo Tj = 25 ° C Io = 250mA to 750mA 4 150 mV Quiescent current Iq Tj = 25 ° C 5.2 8 mA Io = 5mA to 1A 0.5 VI = 17.5V to 30V 1.0 Quiescent current Change ∆Iq VI = 18.5V to 30V mA Output voltage Drift ∆Vo/∆T Io = 5mA -1 mV/ ° C Output noise voltage Vn f = 10Hz to 100KHz, Ta = 25 ° C 90 ㎶ Ripple Rejection RR f = 120Hz, VI = 18.5V to 28.5V 54 70 dB Dropout voltage Vd Io = 1A, Tj = 25 ° C 2 V Peak current Ipk Tj = 25 ° C 2.2 A Output Resistance Ro f = 1KHz 19 Short circuit current Isc Vi = 35V, Ta = 25 ° C 250 mA * Load and lone regulation are specified at constant junction temperature. Changes in Vo due to heating effects must be taken into account separately. Pulse testing with low duty is used. Rev. 02 |
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