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IL7809 Fiches technique(PDF) 7 Page - IK Semicon Co., Ltd |
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IL7809 Fiches technique(HTML) 7 Page - IK Semicon Co., Ltd |
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7 / 21 page IL78XX IL7810 ELECTRICAL CHARACTERISTICS (Refer to test circuit, Tmin<Tj<Tmax, Io=500mA, VI=16V, Ci=0.33 ㎌, Co=0.1 ㎌, unless otherwise sprcified) Characteristic Symbol Test condition Min. Typ. Max. Unit Tj = 25 ° C 9.6 10.0 10.4 Output Voltage Vo 5.0mA ≤Io ≤1.0A, PD ≤15W VI = 12.5V to 25V VI = 13.5V to 25V 9.5 10.0 10.5 V VI = 12.5V to 25V 10 200 Line Regulation ∆Vo Tj = 25 ° C VI = 13V to 25V 3 100 Io = 5.0mA to 1.5A 12 200 Load Regulation ∆Vo Tj = 25 ° C Io = 250mA to 750mA 4 400 mV Quiescent current Iq Tj = 25 ° C 5.1 8 mA Io = 5mA to 1A 0.5 VI = 12.5V to 29V 1 Quiescent current Change ∆Iq VI = 13.5V to 29V mA Output voltage Drift ∆Vo/∆T Io = 5mA -1 mV/ ° C Output noise voltage Vn f = 10Hz to 100KHz, Ta = 25 ° C 58 ㎶ Ripple Rejection RR f = 120Hz, VI = 13V to 23V 56 71 dB Dropout voltage Vd Io = 1A, Tj = 25 ° C 2 V Peak current Ipk Tj = 25 ° C 2.2 A Output Resistance Ro f = 1KHz 17 Short circuit current Isc Vi = 35V, Ta = 25 ° C 250 mA * Load and lone regulation are specified at constant junction temperature. Changes in Vo due to heating effects must be taken into account separately. Pulse testing with low duty is used. Rev. 02 |
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