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BB503C Fiches technique(PDF) 7 Page - Renesas Technology Corp

No de pièce BB503C
Description  Built in Biasing Circuit MOS FET IC UHF RF Amplifier
PDF  11 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

BB503C Fiches technique(HTML) 7 Page - Renesas Technology Corp

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BB503C
Rev.5.00 Aug 10, 2005 page 7 of 10
0
1
2
3
4
10
100
20
50
4
3
2
1
0
20
15
10
5
0
25
20
15
10
5
0
1
23
4
VDS = 5 V
RG = 47 kΩ
f = 900 MHz
1
23
4
5
4
3
2
1
VDS = 5 V
RG = 47 kΩ
f = 900 MHz
VDS = 5 V
RG = 47 kΩ
f = 1 MHz
VDS = VG1 = 5 V
VG2S = 4 V
Gate Resistance RG (kΩ)
Power Gain vs.
Gate2 to Source Voltage
Gate2 to Source Voltage VG2S (V)
Drain Current vs. Gate Resistance
Gate2 to Source Voltage VG2S (V)
Gate2 to Source Voltage VG2S (V)
Input Capacitance vs.
Gate2 to Source Voltage
Noise Figure vs.
Gate2 to Source Voltage
4
0
10
20
30
40
50
3
2
1
0
VDS = VG1 = 5 V
VG2S = 4 V
RG = 47 kΩ
Gain Reduction vs.
Gate2 to Source Voltage
Gate2 to Source Voltage VG2S (V)



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