BB503C datasheet(6/11 Pages) RENESAS

No de pièce	BB503C

Description	Built in Biasing Circuit MOS FET IC UHF RF Amplifier

PDF	11 Pages

Scroll/Zoom	100%

Fabricant	RENESAS [Renesas Technology Corp]

Site Internet	http://www.renesas.com

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6 / 11 page

BB503C

Rev.5.00 Aug 10, 2005 page 6 of 10

234

VDS = 5 V

RG = 47 kΩ

f = 1 kHz

VDS = 5 V

RG = 68 kΩ

f = 1 kHz

Gate1 Voltage

VG1 (V)

Forward Transfer Admittance

vs. Gate1 Voltage

Gate1 Voltage

VG1 (V)

Forward Transfer Admittance

vs. Gate1 Voltage

VG2S = 1 V

4 V

3 V

2 V

VG2S = 1 V

4 V

3 V

2 V

510

100

VDS = VG1 = 5 V

VG2S = 4 V

RG = variable

f = 900 MHz

VDS = VG1 = 5 V

VG2S = 4 V

RG = variable

f = 900 MHz

VDS = VG1 = 5 V

VG2S = 4 V

f = 900 MHz

Drain Current ID (mA)

Gate Resistance RG (kΩ)

Noise Figure vs. Gate Resistance

Gate Resistance RG (kΩ)

Power Gain vs. Gate Resistance

Drain Current ID (mA)

Power Gain vs. Drain Current

Noise Figure vs. Drain Current

VDS = VG1 = 5 V

VG2S = 4 V

f = 900 MHz

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