STVD901J datasheet(2/4 Pages) STMICROELECTRONICS

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STVD901J

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Symbol

Parameter

Value

Unit

Rth (j-a)

Junction to ambient

500

°C/W

THERMAL RESISTANCE

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

Continuous reverse current

VR =6V

STATIC ELECTRICAL CHARACTERISTICS (Tj = 25°C otherwise specified)

Symbol

Parameter

Tests Conditions

Min.

Typ.

Max.

Unit

Diode capacitance

VR = 0.25 V

f = 1 MHz

3.6

4.4

Diode series resistance

VR = 1V

f = 100 MHz

0.5

Ohm

Series inductance

1.5

Cd (0.25 V)

/ Cd (2.7 V)

Capacitance ratio

f = 1 MHz

ELECTRICAL CHARACTERISTICS

I (µA)

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

0.0

2.0

4.0

6.0

8.0

10.0

Tj=125°C

Tj=100°C

Tj=75°C

Tj=25°C

V (V)

Fig. 1: Reverse leakage current versus reverse

voltage applied (typical values).

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

100

125

T (°C)

V =6V

I [T ] / I [T =25°C)

Fig. 2: Relative variation of reverse leakage cur-

rent versus junction temperature (typical values).

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