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BU505 Fiches technique(PDF) 3 Page - STMicroelectronics

No de pièce BU505
Description  High Voltage NPN Multiepitaxial Fast-Switching Transistor
PDF  10 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

BU505 Fiches technique(HTML) 3 Page - STMicroelectronics

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BU505
2 Electrical Characteristics
3/10
2
Electrical Characteristics
Table 3.
Electrical Characteristics (TCASE = 25°C; unless otherwise specified)
Note: 1 Pulsed duration = 300
μs, duty cycle ≤1.5%.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off Current
(VBE = 0)
VCE = 1500V
VCE = 1500V____TC = 125°C
0.15
1
mA
mA
IEBO
Emitter Cut-off Current
(IC = 0)
VEB = 5V
1
mA
VCEO(SUS)
Note: 1
Collector-Emitter
Sustaining Voltage (IB = 0)
IC = 10mA
L = 25mH
700
V
VCE(sat)
Note: 1
Collector-Emitter Saturation
Voltage
IC = 2A _____ IB = 0.9A
1
V
VBE(sat)
Note: 1
Base-Emitter Saturation Voltage IC = 2A _____ IB = 0.9A
1.3
V
Is/b
Second Breakdown Current
VCE = 120V
t = 220
μs2
A
ts
tf
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 2A ____ _ Vclamp = 250V
IB1 = 0.7A ___ Vbe(off) = -5A
Rbb = 0
L = 200
μH
2
350
μs
ns



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