Preliminary Data

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

June 2008

Rev 1

1/9

9

2STR2160

Low voltage fast-switching PNP power transistor

Features

mounting circuits

Applications

Description

The device in a PNP transistor manufactured

using new “PB-HCD” (power bipolar high current

density) technology. The resulting transistor

shows exceptional high gain performances

coupled with very low saturation voltage.

The complementary NPN is the 2STR1160.

Figure 1.

Internal schematic diagram

SOT-23

Table 1.

Device summary

Order code

Marking

Package

Packing

2STR2160

260

SOT-23

Tape and reel

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