2STC5949 datasheet(3/8 Pages) STMICROELECTRONICS

No de pièce	2STC5949

Description	High power NPN epitaxial planar bipolar transistor

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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2STC5949

Electrical characteristics

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Electrical characteristics

(Tcase = 25 °C; unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICBO

Collector cut-off current

(IE = 0)

VCB = 250 V

5µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 6 V

5µA

V(BR)CEO

(1)

Pulsed duration = 300 µs, duty cycle

≤ 1.5%

Collector-emitter breakdown

voltage (IB = 0)

IC = 50 mA

250

V(BR)CBO

Collector-base breakdown

voltage (IE = 0)

IC = 100 µA

250

V(BR)EBO

(1) Emitter-base breakdown

voltage (IC = 0)

IE = 1 mA

VCE(sat)

(1) Collector-emitter saturation

voltage

IC = 8 A

IB = 800 mA

VBE

(1)

Base-emitter on voltage

IC = 7 A

VCE = 5 V

1.5

hFE

DC current gain

IC = 1 A

VCE = 5 V

IC = 7 A

VCE = 5 V

160

Transition frequency

IC = 1 A

VCE = 5 V

MHz

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