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Moteur de recherche de fiches techniques de composants électroniques |
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Moteur de recherche de fiches techniques de composants électroniques |
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STB36NM60ND Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STB36NM60ND Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc N-Channel MOSFET Transistor STB36NM60ND www.iscsemi.com V2.0 1 FEATURES ·Drain Current -ID= 29A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.11Ω(Max)@VGS= 10V DESCRIPTION · DC-to-DC Converter · General Industrial Applications · Power Motor Control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ± 25 V ID Drain Current-Continuous 29 A IDM Drain Current-Single Pulse 116 A PD Total Dissipation @TC=25℃ 190 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.66 ℃ /W |
Numéro de pièce similaire - STB36NM60ND |
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Description similaire - STB36NM60ND |
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