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AP30G10GD Fiches technique(PDF) 5 Page - A POWER MICROELECTRONICS |
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AP30G10GD Fiches technique(HTML) 5 Page - A POWER MICROELECTRONICS |
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5 / 10 page ![]() AP30G10GD 30V N+P-Channel Enhancement Mode MOSFET AP30G10GD REV1.0 永源微電子科技有限公司 Figure 7: Normalized Breakdown Voltage vs. Figure 8: Normalized on Resistance vs Junction Temperature Junction Temperature Figure 9: Maximum Safe Operating Area Figure 10: Maximum Continuous Drain vs. Case Temperature Current Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case |
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