AP30G10GD datasheet(1/10 Pages) APME

No de pièce	AP30G10GD

Description	30V NP-Channel Enhancement Mode MOSFET

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Fabricant	APME [A POWER MICROELECTRONICS]

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AP30G10GD

30V N+P-Channel Enhancement Mode MOSFET

AP30G10GD REV1.0

永源微電子科技有限公司

Description

The AP30G10GD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 100V ID =32A

RDS(ON) < 42mΩ @ VGS=10V （Type：35mΩ）

VDS = -100V ID =-28A

RDS(ON) < 100mΩ @ VGS=-10V（Type：80mΩ）

Application

BLDC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP30G10GD

TO252-4L

AP30G10GD XXX YYYY

2500

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage

±

20

±

20

V

ID@TA=25℃

Continuous Drain Current, VGS @ 10V1

32

-28

A

ID@TA=70℃

Continuous Drain Current, VGS @ 10V1

21

-18.1

A

IDM

Pulsed Drain Current2

90

-85

A

EAS

Single Pulse Avalanche Energy3

138

147

mJ

IAS

Avalanche Current

17

33

A

PD@TA=25℃

Total Power Dissipation4

46

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62.5

℃

/W

RθJC

Thermal Resistance Junction-Case1

2.6

℃

/W

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AP30G10GD Fiches technique(PDF) 1 Page - A POWER MICROELECTRONICS

AP30G10GD Fiches technique(HTML) 1 Page - A POWER MICROELECTRONICS

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