AP4N10AI datasheet(1/7 Pages) APME

No de pièce	AP4N10AI

Description	100V N-Channel Enhancement Mode MOSFET

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Fabricant	APME [A POWER MICROELECTRONICS]

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AP4N10AI

100V N-Channel Enhancement Mode MOSFET

AP4N10AI REV1.0

永源微電子科技有限公司

Description

The AP4N10AI uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 100V ID =4.0A

RDS(ON) < 220mΩ @ VGS=10V (Type：175mΩ)

Application

LED

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP4N10AI

SOT23L

AP4N10AI

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage

±20

V

ID@TA=25℃

Continuous Drain Current, VGS @ 10V1

4.0

A

ID@TA=100℃

Continuous Drain Current, VGS @ 10V1

2.5

A

IDM

Pulsed Drain Current2

16

A

PD@TA=25℃

Total Power Dissipation3

3.75

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

125

℃/W

RθJC

Thermal Resistance Junction-Case1

30

℃/W

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