LCDP1511D datasheet(3/6 Pages) STMICROELECTRONICS

3 / 6 page

Symbol

Test conditions

Max

Unit

Square pulse : tp = 500

µsIF =1A

VFP

(note 1)

10/700

µs

1.2/50

µs

2/10

µs

1kV

1.5kV

2.5kV

RP =60

Ω

RP =60

Ω

RP = 245

Ω

IPP = 10A

IPP = 15A

IPP = 10A

note 1 : see test circuit for VFP,RP is the protection resistor located on the line card

PARAMETERS RELATED TO THE DIODE LINE / GND (Tamb =25

°C)

Symbol

Test conditions

Max

Unit

IRM

VGATE/ LINE = -1V

VRM = -75V

µA

VR = -3V

F = 1MHz

VR = -48V F = 1MHz

200

100

PARAMETERS RELATED TO LINE / GND (Tamb =25

°C)

Symbol

Test conditions

Min

Max

Unit

IGT

VGND / LINE = -48V

5mA

VGATE = -48V (see note 2)

150

VGT

at IGT

2.5

IRG

VRG = -75V

µA

VDGL

VGATE = -48V (see note 3)

10/700

µs

1.2/50

µs

2/10

µs

1kV

1.5kV

2.5kV

RP =60

Ω

RP =60

Ω

RP =245

Ω

IPP = 10A

IPP = 15A

IPP = 10A

note 2 : see functional holding current test circuit

note 3 : See test circuit for VDGL

The oscillations with a time duration lower than 50ns are not taken into account

PARAMETERS RELATED TO THE PROTECTION THYRISTOR (Tamb =25

°C)

0.01

0.10

1.00

10.00

100.00

1000.00

t(s)

ITSM(A)

F=50Hz

Tj initial=25

°C

Fig. 1: Surge peakcurrent versus overloadduration.

-40

-20

100

120

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Tj(

°C)

IH[Tj] / IH[Tj=25

°C]

Fig. 2: Relative variation of holding current versus

junction temperature.

LCDP1511D

3/6

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