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V1.0

11/09/19

PNP Medium Power Transistor

Newark.com/multicomp-pro

Farnell.com/multicomp-pro

Element14.com/multicomp-pro

Electrical Characteristics (Ta = 25°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector - Base Breakdown Voltage

V(BR)CBO

IC=-100μA, IE=0 BCX51

BCX52

BCX53

-45

-60

-100

V

Collector - Emitter Breakdown Voltage

V(BR)CEO

IC=-10mA, IB=0 BCX51

BCX52

BCX53

-45

-60

-80

Emmiter - Base Breakdown Voltage

V(BR)EBO IE=-10μA, IC=0

-5

Collector Cut-Off Current

ICBO

VCB=-30V, IE=0

-0.1

A

DC Current Gain

hFE

VCE=-2V, IC=-5mA

VCE=-2V, IC=-150mA

VCE=-2V, IC=-150mA -10

-16

VCE=-2V, IC=-500mA

25

40

63

100

25

250

160

250

Collector - Emitter Saturation Voltage

VCE(sat)

IC=-500mA, IB=-50mA

-0.5

V

Base Emitter Voltage

VBE

IC=-500mA, VCE=-2V

-1

Transition Frequency

fT

VCE=-10, IC=-50, f=20MH

125

MHz

Total power dissipation Ptot = f(TS)

Collector current IC = f (VBE)

VCE = 2V