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IS25LE512M-RGLA3:P-TY Fiches technique(PDF) 78 Page - Integrated Silicon Solution, Inc

No de pièce IS25LE512M-RGLA3:P-TY
Description  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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Fabricant  ISSI [Integrated Silicon Solution, Inc]
Site Internet  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE512M-RGLA3:P-TY Fiches technique(HTML) 78 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
78
Rev. A6
06/16/2025
Figure 8.15 Fast Read Quad I/O Sequence (EBh [EXTADD=0], 3-byte address)
CE #
SCK
5
1
Data Out 1
Instruction = EBh
20
CE #
SCK
4
0
4
0
3-byte Address
High Impedance
16
12
8
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
Mode 3
Mode 0
...
tV
IO0
IO1
4
0
5
1
5
1
4
0
4
0
5
1
4
0
IO0
IO1
21
5
1
5
1
17
13
9
22
6
2
6
2
18
14
10
23
7
3
7
3
19
15
11
Mode Bits
IO2
IO3
6
2
6
2
6
2
6
2
7
3
7
3
7
3
7
3
Data Out 2 Data Out 3 Data Out 4
IO2
IO3
1
0
5
1
...
4
0
...
2
6
2
...
3
7
3
...
5
4
6
7
6 Dummy Cycles
Data Out 5 Data Out 6
Notes:
1. If the mode bits=AXh
(where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles
are same, then X should be Hi-Z.



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