L9347_V01 datasheet(11/29 Pages) STMICROELECTRONICS

11 / 29 page

L9347

Electrical specifications

11/29

Currents

IQ1/2

Output current for Q1 and Q2

internal

limited

IQ3/4

Output current for Q3 and Q4

internal

limited

IQ1/2,

IPGND1/2

Output current at reversal supply for Q1

and Q2

-4

IQ3/4,

IPGND3/4

Output current at reversal supply for Q3

and Q4

-2

IST

Output current status pin

-5

ESD Protection

ESD

Electrostatical Discharging

MIL883C

2kV

ESD

Output Pins (Qx, Dx)

vs. Common GND

(PGND1-4 + GND)

4kV

Table 4.

Absolute maximum ratings (continued)

The absolute maximum ratings are the limiting values for this device. Damage may occur if

this device is subjected to conditions which are beyond these values

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

Table 5.

Thermal data

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

Junction temperature

-40

150

°C

Tjc

Junction temperature during clamping

(life time)

t = 30min

t = 15min

175

190

°C

Tstg

Storage temperature

Tstg

-55

150

°C

Tth

Overtemperature shutdown threshold

(1)

175

200

°C

Thy

Overtemperature shutdown hysteresis

(1)

°C

RthJC

Thermal resistance junction to case

RthJC

2K/W

This parameter will not be tested but assured by design.

Table 6.

Operating range

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Supply voltage

4.8

VCC, VDD

Supply voltage

4.5

5.5

dVS/dt

Supply voltage transient time

-1

V/s

Output voltage static

-0.3

Output voltage induced by inductive

switching

Voltage will be

limited by internal

Z-diode clamping

VST

Output voltage status

-0.3

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