LP8900

IN

GND

VIN

VEN 1

VOUT 1

1 PF

VOUT 2

VEN 2

EN1

EN2

OUT2

OUT1

CIN

COUT 1

COUT 2

1 PF

1 PF

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

LP8900

SNVS542E – MAY 2008 – REVISED JUNE 2016

LP8900 200-mA Ultra-Low-Noise Dual LDO

For RF and Analog Circuits

1

1 Features

1

•

Input Voltage Operation: 1.8 V to 5.5 V

•

Output Voltage: 1.2 V to 3.6 V

•

Accuracy Over Temperature: 1%

•

Output Voltage Noise: 6 µVRMS

•

PSRR: 75 dB at 1 kHz

•

Dropout: 110 mV at 200 mA Load

•

Quiescent Current: 48 µA per Regulator

•

Start-Up Time: 80 µs

•

Stable With Ceramic Capacitors as Small as 0402

•

Thermal-Overload and Short-Circuit Protection

2 Applications

•

Battery-Operated Devices

•

Hand-Held Information Appliances

•

Noise Sensitive RF Applications

•

DC-DC Convertor Post Regulation and Filter

3 Description

The LP8900 is a dual LDO capable of supplying 200-

mA output current per regulator. Designed to meet

the requirements of RF and analog circuits, the

LP8900 provides low device noise, high PSRR, low

quiescent

current,

and

superior

line

transient

response figures.

Using new innovative design techniques, the LP8900

offers class-leading device noise performance without

a noise bypass capacitor.

The LP8900 is designed to be stable with space

saving ceramic capacitors as small as 0402 case

size, enabling a solution size < 4 mm2. Performance

is

specified

for

a

–40°C

to

+125°C

junction

temperature range.

Output voltage options from 1.2 V to 3.6 V are

available; for availability, contact your local TI sales

office.

Device Information(1)

PART NUMBER

PACKAGE

BODY SIZE (MAX)

LP8900

DSBGA (6)

1.49 mm × 1.09 mm

(1) For all available packages, see the orderable addendum at

the end of the data sheet.

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Typical Application Circuit