4

LP8900

SNVS542E – MAY 2008 – REVISED JUNE 2016

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Copyright © 2008–2016, Texas Instruments Incorporated

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltages are with respect to the potential at the GND pin.

(3)

Internal thermal shutdown circuitry protects the device from permanent damage.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)

(1) (2)

MIN

MAX

UNIT

IN, OUT pins: Voltage to GND

–0.3

6.5

V

EN pin: Voltage to GND

–0.3 to (VIN + 0.3V)

6.5

°C

Continuous power dissipation(3)

Internally limited

Junction temperature

150

°C

Storage temperature, Tstg

–65

150

°C

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2)

JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.2 ESD Ratings

VALUE

UNIT

V(ESD)

Electrostatic

discharge

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±2000

V

Charged-device model (CDM), per JEDEC specification JESD22-C101(2)

±200

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended

Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

The maximum ambient temperature (TA(MAX)) is dependant on the maximum operating junction temperature (TJ(MAX-OP) = 125°C), the

maximum power dissipation of the device in the application (PD(MAX)), and the junction to ambient thermal resistance of the part /

package in the application (RθJA), as given by: TA(MAX) = TJ(MAX-OP) – (RθJA × PD(MAX)).

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

(1)

MIN

NOM

MAX

UNIT

Input voltage

1.8

5.5

V

Recommended load current per channel

200

mA

Junction temperature, TJ

–40

125

°C

Ambient temperature, TA

(2)

–40

85

°C

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

7.4 Thermal Information

THERMAL METRIC(1)

LP8900

UNIT

YZR (DSBGA)

6 PINS

RθJA

Junction-to-ambient thermal resistance

140.0

°C/W

RθJC(top)

Junction-to-case (top) thermal resistance

1.0

°C/W

RθJB

Junction-to-board thermal resistance

26.0

°C/W

ψJT

Junction-to-top characterization parameter

0.3

°C/W

ψJB

Junction-to-board characterization parameter

26.0

°C/W