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TPD7203F Fiches technique(PDF) 6 Page - Toshiba Semiconductor |
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TPD7203F Fiches technique(HTML) 6 Page - Toshiba Semiconductor |
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6 / 19 page ![]() TPD7203F 2006-10-31 6 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Remarks Power supply voltage VDD − 0.5 ~ 30 V ISOURCE 1 Output current ISINK 1 A Pulse width ≤10 μs Input voltage VIN − 0.5 ~ 7.0 V Fault pin voltage VFAULT 30 V U, V and pin negative voltage U ( −) V ( −) W ( −) − 0.5 V Negative voltage that can be applied to U, V and W pins (Reference to SGND pin) PGND pin negative voltage PGND( −) − 0.5 V Negative voltage that can be applied to PGND pin (reference to SGND pin) Fault pin current IFAULT 5 mA 0.8 Power dissipation PD 1.2 Note W Operating temperature Topr − 40 ~ 125 °C Storage temperature Tstg − 40 ~ 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Resistance Characteristic Symbol Rating Unit 156.3 Junction to ambient thermal resistance Rth (j-a) 104.2 Note °C / W Note: When the device is mounted on a 60 mm × 60 mm × 1.6 mm glass epoxy PCB |
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