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TPD7203F Fiches technique(PDF) 6 Page - Toshiba Semiconductor

No de pièce TPD7203F
Description  Power MOSFET Gate Driver for 3-Phase DC Motor
PDF  19 Pages
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Fabricant  TOSHIBA [Toshiba Semiconductor]
Site Internet  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPD7203F Fiches technique(HTML) 6 Page - Toshiba Semiconductor

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TPD7203F
2006-10-31
6
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Remarks
Power supply voltage
VDD
− 0.5 ~ 30
V
ISOURCE
1
Output current
ISINK
1
A
Pulse width ≤10
μs
Input voltage
VIN
− 0.5 ~ 7.0
V
Fault pin voltage
VFAULT
30
V
U, V and pin negative voltage
U (
−)
V (
−)
W (
−)
− 0.5
V
Negative voltage that can be applied to U,
V and W pins (Reference to SGND pin)
PGND pin negative voltage
PGND(
−)
− 0.5
V
Negative voltage that can be applied to
PGND pin
(reference to SGND pin)
Fault pin current
IFAULT
5
mA
0.8
Power dissipation
PD
1.2 Note
W
Operating temperature
Topr
− 40 ~ 125
°C
Storage temperature
Tstg
− 40 ~ 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Resistance
Characteristic
Symbol
Rating
Unit
156.3
Junction to ambient thermal resistance
Rth (j-a)
104.2 Note
°C / W
Note:
When the device is mounted on a 60 mm
× 60 mm × 1.6 mm glass epoxy PCB



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