2N1711 datasheet(1/4 Pages) STMICROELECTRONICS

No de pièce	2N1711

Description	EPITAXIAL PLANAR NPN

PDF	4 Pages

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

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2N1711

EPITAXIAL PLANAR NPN

DESCRIPTION

The 2N1711

is a silicon Planar Epitaxial NPN

transistor in Jedec TO-39 metal case. It is

intented for use in high performance amplifier,

oscillator and switching circuits.

The 2N1711 is also used to advantage in

amplifiers where low noise is an important factor.

®

INTERNAL SCHEMATIC DIAGRAM

September 2002

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VCBO

Collector-Base Voltage (IE = 0)

75

V

VCER

Collector-Emitter Voltage (RBE

≤ 10Ω)

50

V

VEBO

Emitter-Base Voltage (IC = 0)

7

V

IC

Collector Current

500

mA

Ptot

Total Dissipation at Tamb

≤ 25 oC

at TC

≤ 25 oC

at TC

≤ 100 oC

0.8

3

1.7

W

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

TO-39

1/4

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