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MMBT6520L Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MMBT6520L Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc website: www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor MMBT6520L DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -350V(Min) · High DC Current Gain- : hFE=30(Min)@ (VCE= -10V, IC= -10mA) · Low Saturation Voltage- : VCE(sat)= -0.5V(Max)@ (IC= -30mA, IB= -3mA) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use as a driver in DC/DC converters and actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -350 V VCEO Collector-Emitter Voltage -350 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -0.5 A IB Base Current-Continuous -0.25 A PT Total Power Dissipation @TC=25℃ 0.3 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Numéro de pièce similaire - MMBT6520L |
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Description similaire - MMBT6520L |
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