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BCR1AM Fiches technique(PDF) 4 Page - Powerex Power Semiconductors

No de pièce BCR1AM
Description  Lead-Mount Triac 1 Ampere/400-600 Volts
PDF  4 Pages
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Fabricant  POWEREX [Powerex Power Semiconductors]
Site Internet  http://www.pwrx.com
Logo POWEREX - Powerex Power Semiconductors

BCR1AM Fiches technique(HTML) 4 Page - Powerex Power Semiconductors

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Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (412) 925-7272
BCR1AM
Lead-Mount Triac
1 Ampere/400-600 Volts
BREAKOVER VOLTAGE VS.
RATE OF RISE OF OFF-STATE VOLTAGE
(TYPICAL)
RATE OF RISE OF OFF-STATE VOLTAGE, dv/dt, (V/ s)
0
20
40
60
80
100
120
140
160
101
100
102
103
Tj = 125°C
I QUADRANT
III QUADRANT
REPETITIVE PEAK OFF-STATE CURRENT
VS. JUNCTION TEMPERATURE
(TYPICAL)
JUNCTION TEMPERATURE, Tj, (°C)
-60
-20
20
60
100
140
-40
0
40
80
120
102
103
104
105
GATE TRIGGER CURRENT
VS. GATE CURRENT PULSE WIDTH
(TYPICAL)
GATE CURRENT PULSE WIDTH, tw, ( s)
101
102
103
100
101
102
IFGT I
IRGT III
IRGT I
IFGT III
Tj = 25°C
HOLDING CURRENT
VS. JUNCTION TEMPERATURE
(TYPICAL)
JUNCTION TEMPERATURE, Tj, (°C)
-60
-20
20
60
100
140
-40
0
40
80
120
101
102
103
BREAKOVER VOLTAGE
VS. JUNCTION TEMPERATURE
(TYPICAL)
JUNCTION TEMPERATURE, Tj, (°C)
-60
-20
20
60
100
140
-40
0
40
80
120
0
20
40
60
80
100
120
140
160
COMMUTATION CHARACTERISTICS
(TYPICAL)
RATE OF DECAY OF ON-STATE
COMMUTATING CURRENT, (A/ms)
10-1
100
101
10-1
100
101
Tc = 125
oC
IT = 1A
= 500 s
VD = 200v
MINIMUM
CHARACTERISTICS
VALUE
III QUADRANT
I QUADRANT
GATE TRIGGER CHARACTERISTICS
TEST CIRCUITS
TEST PROCEDURE I
TEST PROCEDURE II
RG
6V
6
A
V
RG
6V
6
TEST PROCEDURE III
TEST PROCEDURE IV
A
V
RG
6V
6
A
V
RG
6V
6
A
V
T-4
Commutating
dv/dt, (dv/dt)c
Commutating Voltage &
Part
VDRM
(V/ sec)
Current Waveform
Number
(Volts)
Minimum
Test Condition
(Inductive Load)
BCR1AM-8
400
2
Tj = 125°C,
BCR1AM-12 600
2
Rate of Decay
On-state
Commutating Current
(di/dt)c = -0.5A/msec,
Peak Off-state
Voltage
VD = 400V
SUPPLY
VOLTAGE
(di / dt)C
(dv / dt)C
VD
VD
MAIN
CURRENT
MAIN
VOLTAGE
t
t
t



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