IRF540 datasheet(2/8 Pages) STMICROELECTRONICS

No de pièce	IRF540

Description	N-CHANNEL 100V - 0.055廓 - 22A TO-220 LOW GATE CHARGE STripFET??II POWER MOSFET

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IRF540

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THERMAL DATA

ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)

OFF

ON (1)

DYNAMIC

Rthj-case

Rthj-amb

Tl

Thermal Resistance Junction-case

Thermal Resistance Junction-ambient

Maximum Lead Temperature For Soldering Purpose

Max

Typ

1.76

62.5

300

°C/W

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

Breakdown Voltage

ID = 250 µA, VGS = 0

100

V

IDSS

Zero Gate Voltage

Drain Current (VGS = 0)

VDS = Max Rating

VDS = Max Rating TC = 125°C

1

10

µA

IGSS

Gate-body Leakage

Current (VDS = 0)

VGS = ± 20V

±100

nA

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = 250 µA

23

4

V

RDS(on)

Static Drain-source On

Resistance

VGS = 10 V

ID = 11 A

0.055

0.077

Ω

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs (*)

Forward Transconductance

VDS =25 V

ID = 11 A

20

S

Ciss

Coss

Crss

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VDS = 25V, f = 1 MHz, VGS = 0

870

125

52

pF

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