IRF540 datasheet(1/8 Pages) STMICROELECTRONICS

No de pièce	IRF540

Description	N-CHANNEL 100V - 0.055廓 - 22A TO-220 LOW GATE CHARGE STripFET??II POWER MOSFET

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Fabricant	STMICROELECTRONICS [STMicroelectronics]

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February 2003

NEW DATASHEET ACCORDING TO PCN DSG/CT/1C16 MARKING: IRF540 &

IRF540

N-CHANNEL 100V - 0.055

Ω - 22A TO-220

LOW GATE CHARGE STripFET™ II POWER MOSFET

s

TYPICAL RDS(on) = 0.055Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE

s

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This MOSFET series realized with STMicroelectronics

unique STripFET process has specifically been designed

to minimize input capacitance and gate charge. It is

therefore suitable as primary switch in advanced high-

efficiency, high-frequency isolated DC-DC converters for

Telecom and Computer applications. It is also intended

for any applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

TYPE

VDSS

RDS(on)

ID

IRF540

100 V

<0.077

Ω

22 A

1

2

3

TO-220

Ordering Information

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

1) ISD ≤22A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX

(2) Starting Tj = 25 oC, ID = 12A, VDD = 30V

SALES TYPE

MARKING

PACKAGE

PACKAGING

IRF540

IRF540&

TO-220

TUBE

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

100

V

VGS

Gate- source Voltage

± 20

V

ID

Drain Current (continuous) at TC = 25°C

22

A

ID

Drain Current (continuous) at TC = 100°C

15

A

IDM(•)

Drain Current (pulsed)

88

A

Ptot

Total Dissipation at TC = 25°C

85

W

Derating Factor

0.57

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

9

V/ns

EAS (2)

Single Pulse Avalanche Energy

220

mJ

Tstg

Storage Temperature

-55 to 175

°C

Tj

Max. Operating Junction Temperature

INTERNAL SCHEMATIC DIAGRAM

Numéro de pièce similaire - IRF540

Fabricant	No de pièce	Fiches technique	Description
NXP Semiconductors	IRF540	86Kb / 9P	N-channel TrenchMOS transistor August 1999 Rev 1.100
SHENZHEN DOINGTER SEMIC...	IRF540	1Mb / 5P	N-Channel MOSFET uses advanced trench technology
STMicroelectronics	IRF540	53Kb / 6P	N - CHANNEL100V - 00.50ohm - 30A - TO-220/TO-220FI POWER MOSFET
List of Unclassifed Man...	IRF540	2Mb / 31P	SEMICONDUCTORS
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