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TDA8552T Fiches technique(PDF) 13 Page - NXP Semiconductors |
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TDA8552T Fiches technique(HTML) 13 Page - NXP Semiconductors |
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13 / 28 page ![]() 1998 Jun 02 13 Philips Semiconductors Preliminary specification 2 × 1.4 W BTL audio amplifiers with digital volume control and headphone sensing TDA8552T; TDA8552TS AC CHARACTERISTICS (FOR HEADPHONE; RL =32 Ω; CONNECTED SE) VDD =5V; Tamb =25 °C; f = 1 kHz; total gain setting at 20 dB; VMODE = 0 V; gain select pin is 0 V (maximum gain = 20 dB); according to Fig.4. Notes 1. The noise output voltage is measured at the output in a frequency band from 20 Hz to 20 kHz (unweighted), Rsource =0 Ω, gain select pin is LOW (0 V). 2. Supply voltage ripple rejection is measured at the output, with a source impedance of Rsource =0 Ω at the input. The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS) is applied to the positive supply rail, gain select pin is LOW (0 V). SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Po output power THD = 10%; VDD = 3.3 V − 35 − mW THD = 10%; VDD = 5.0 V − 90 − mW THD = 0.5%; VDD = 3.3 V − 25 − mW THD = 0.5%; VDD = 5.0 V − 60 − mW THD total harmonic distortion Po =60mW − 0.04 − % Vo(n) noise output voltage note 1 − 60 100 µV SVRR supply voltage ripple rejection note 2 50 55 − dB Vi(max) maximum input voltage THD = 1%; Gv = −50 to 0 dB −− 1.75 V α cs channel separation 50 −− dB Fig.3 Timing UP/DOWN pin. The rise time (tr) of the pulse may have any value. handbook, full pagewidth MGM611 tr VDD VUP/DOWN 0 Vth(UP) Vth(DOWN) Vfloat(max) Vfloat(min) tw increasing volume decreasing volume floating trep tr t tw trep |
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