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ISG2103 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISG2103 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISG2103 eq AOK40B120H1 Trench gate Field-Stop IGBT www.iscsemi.com 1 DESCRIPTION · 1200V, 40A · High Speed Switching · Low Power Loss APPLICATIONS · Welding Machines · UPS & Solar Inverters · Very High Switching Frequency Applications ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage ± 30 V IC Collector Current-Continuous @ TC=100℃ 40 A ICM Pulsed Collector Current Limited by TJmax 120 A IF Diode Forward Current @ TC=100℃ 24 A IFM Pulsed forward current Limited by TJmax 120 A PD Power Dissipation @TC=25℃ 500 W Tj Operating Junction Temperature -40~175 ℃ Tstg Storage Temperature Range -55~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case IGBT 0.3 ℃ /W Rth j-c Thermal Resistance,Junction to Case diode 0.85 ℃ /W |
Numéro de pièce similaire - ISG2103 |
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Description similaire - ISG2103 |
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