ISG2103

eq AOK40B120H1

Trench gate Field-Stop IGBT

www.iscsemi.com

2

STATIC CHARACTERISTICS（TJ = 25 °C unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

VCES

Collector-Emitter Breakdown Voltage VGE=0, IC= 1mA

1200

--

--

V

VGE(th)

Gate-Emitter Threshold Voltage

VGE=VCE, IC= 1mA

5.0

5.9

7.0

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 40A, VCE= 15V,

TC=25℃

--

1.8

2.3

V

ICES

Zero Gate Voltage Collector Current

VCE= 1200V, VGE=0

--

--

10

uA

IGES

Gate-Emitter Leakage Current

VGE=±30V, VCE=0

--

--

±

100

nA

VF

Diode Forward Voltage

IF=40A,TJ=25℃

--

--

3.5

V

trr

Reverse Recovery Time

VCE=600V,IF=40A,dIF/dt

=300A/us

--

440

--

ns

Qrr

Reverse recovery charge

--

8.5

--

nC

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