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LT1010CDD Fiches technique(PDF) 13 Page - Linear Technology |
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LT1010CDD Fiches technique(HTML) 13 Page - Linear Technology |
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13 / 20 page ![]() 13 LT1010 1010fc High Current Booster The circuit below uses a discrete stage to get 3A output capacity. The configuration shown provides a clean, quick way to increase LT1010 output power. It is useful for high current loads such as linear actuator coils in disk drives. The 33 Ω resistors sense the LT1010’s supply current with the grounded 100 Ω resistor supplying a load for the LT1010. The voltage drop across the 33 Ω resistors biases Q1 and Q2. Another 100 Ω value closes a local feedback loop, stabilizing the output stage. Feedback to the LT1056 control amplifier is via the 10k value. Q3 and Q4, sensing across the 0.18 Ω units, furnish current limiting at about 3.3A. APPLICATIO S I FOR ATIO signal. The amplified difference between these signals is used to set Q2’s bias, and hence, Q1’s channel current. This forces Q1’s VGS to whatever voltage is required to match the circuit’s input and output potentials. The 2000pF capacitor at A1 provides stable loop compensation. The RC network in A1’s output prevents it from seeing high speed edges coupled through Q2’s collector-base junc- tion. A2’s output is also fed back to the shield around Q1’s gate lead, bootstrapping the circuit’s effective input ca- pacitance down to less than 1pF. Gain-Trimmable Wideband FET Amplifier A potential difficulty with the previous circuit is that the gain is not quite unity. The figure labeled A on the next page maintains high speed and low bias while achieving a true unity-gain transfer function. This circuit is somewhat similar except that the Q2-Q3 stage takes gain. A2 DC stabilizes the input-output path and A1 provides drive capability. Feedback is to Q2’s emitter from A1’s output. The 1k adjustment allows the gain to be precisely set to unity. With the LT1010, output stage slew and full power bandwidth (1VP-P) are 100V/µs and 10MHz respectively. – 3dB bandwidth exceeds 35MHz. At A = 10 (e.g., 1k adjustment set at 50 Ω), full power bandwidth stays at 10MHz while the –3dB point falls to 22MHz. With the optional discrete stage, slew exceeds 1000V/ µs and full power bandwidth (1VP-P) is 18MHz. – 3dB band- width is 58MHz. At A = 10, full power is available to 10MHz, with the – 3dB point at 36MHz. LT1010 100 Ω 33 Ω –15V 33 Ω 10k 22 µF 15V 100 Ω 1k 0.18 Ω 1k 0.18 Ω Q1 MJE2955 Q2 MJE3055 OUTPUT 1010 AI17 Q4 2N3904 Q3 2N3906 – + LT1056 10k 68pF INPUT + 22 µF HEAT SINK OUTPUT TRANSISTORS 15pF A2 LT1010 1k 10k –5V 5V 3 B A OUTPUT 6 4 –5V 5V 7 0.1 µF 2 Q2 2N2222 INPUT Q1 2N5486 2000pF 0.1 µF 1010 AI18 0.01 µF 10M 100 Ω A1 LTC1050 10M Wideband FET Input Stabilized Buffer The figure below shows a highly stable unity-gain buffer with good speed and high input impedance. Q1 and Q2 constitute a simple, high speed FET input buffer. Q1 functions as a source follower with the Q2 current source load setting the drain-source channel current. The LT1010 buffer provides output drive capability for cables or whatever load is required. Normally, this open-loop con- figuration would be quite drifty because there is no DC feedback. The LTC ®1050 contributes this function to stabilize the circuit. It does this by comparing the filtered circuit output to a similarly filtered version of the input |
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