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SST25WF080B Fiches technique(PDF) 19 Page - Microchip Technology

No de pièce SST25WF080B
Description  8-Mbit, 1.8V, SPI Serial Flash
PDF  44 Pages
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Fabricant  MICROCHIP [Microchip Technology]
Site Internet  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST25WF080B Fiches technique(HTML) 19 Page - Microchip Technology

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DS20005164H-page 19
SST25WF080B
5.13
Power-Down
The Deep Power-Down (DPD) instruction puts the
device in the lowest power consumption mode – the
Deep Power-Down mode. This instruction is ignored if
the device is busy with an internal write operation.
While the device is in DPD mode, all instructions are
ignored except for the Release Deep Power-Down
instruction or Read ID.
To initiate deep power-down, input the Deep Power-
Down instruction (B9H) while driving CE# low. CE#
must be driven high before executing the DPD instruc-
tion. After driving CE# high, it requires a delay of TDPD
before the standby current ISB is reduced to the deep
power-down current IDPD. See Figure 5-11 for the DPD
instruction sequence.
Exit the power-down state using the Release from
Deep Power-Down or Read ID instruction. CE# must
be driven low before sending the Release from Deep
Power-Down command cycle (ABH), and then driving
CE# high. The device will return to Standby mode and
be ready for the next instruction after TSBR. See Figure
5-14. for the Release from Deep Power-Down
sequence.
FIGURE 5-13:
DEEP POWER-DOWN SEQUENCE
FIGURE 5-14:
RELEASE FROM DEEP POWER-DOWN SEQUENCE
CE#
SO
SI
SCK
01 2 3 4 5 6 7
B9
High-Impedance
MODE 0
MODE 3
MSb
TDPD
CE#
SO
SI
SCK
01 2 3 4 5 6 7
AB
High-Impedance
MODE 0
MODE 3
MSb
TSBR



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