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ISG2102 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISG2102 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISG2102 eq STGF3NC120HD Very fast IGBT www.iscsemi.com 1 DESCRIPTION · High voltage capability · High Speed Switching & Low Power Loss · Very ultrafast recovery diode APPLICATIONS • Home appliance • Lighting ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 1200 V VGES Gate-Emitter Voltage ± 20 V IC Collector Current-Continuous @ TC=25℃ 6 A IC Collector Current-Continuous @ TC=100℃ 3 A ICM Pulsed Collector Current@ TC=25℃ 20 A IF Diode Forward Current @ TC=25℃ 3 A PD Power Dissipation @TC=25℃ 25 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case IGBT 5 ℃ /W Rth j-c Thermal Resistance,Junction to Case diode 3.5 ℃ /W 12 3 TO-220F package Pin 1.Gate 2.Collector 3.Emitter |
Numéro de pièce similaire - ISG2102 |
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Description similaire - ISG2102 |
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