ISG2102

eq STGF3NC120HD

Very fast IGBT

www.iscsemi.com

2

STATIC CHARACTERISTICS（TJ = 25 °C unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYPE

MAX

UNIT

V(BR)CES

Collector-Emitter Breakdown

Voltage

VGE=0, IC= 1mA

1200

--

--

V

VGE(th)

Gate-Emitter Threshold Voltage

VGE= VCE, IC= 0.25mA

2.0

--

5.0

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= 3A, VCE= 15V

--

--

2.8

V

IC= 3A, VCE= 15V,TJ=125℃

--

2.2

--

V

ICES

Zero Gate Voltage Collector Current VCE= 1200V, VGE=0

--

--

50

uA

IGES

Gate-Emitter Leakage Current

VGE=±20V, VCE=0

--

--

±

100

nA

VF

Diode Forward Voltage

IF= 1.5A

--

--

2.0

V

IF= 1.5A,TJ=125℃

--

1.3

--

V

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