FDN358P datasheet(1/5 Pages) EVVOSEMI

No de pièce	FDN358P

Description	P−CHANNEL MOSFET

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Fabricant	EVVOSEMI [EVER SEMICONDUCTOR CO.,LIMITED]

Site Internet	https://www.evvosemi.com

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General Description

These devices are well suited for portable electronics

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

Features

•

• Low gate charge (4 nC typical)

• High performance trench technology for extremely

low R DS(ON) .

• High power version of industry Standard SOT-23

package. Identical pin-out to SOT-23 with 30%

higher power handling capability.

D

S

G

Absolute Maximum Ratings

TA=25

oC unless otherwise noted

Symbol

Parameter

Ratings

Units

VDSS

Drain-Source Voltage

–30

V

VGSS

Gate-Source Voltage

±20

V

ID

Drain Current

– Continuous

(Note 1a)

–1.5

A

– Pulsed

–5

Power Dissipation for Single Operation

(Note 1a)

0.5

PD

(Note 1b)

0.46

W

TJ, TSTG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

RθJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

250

°C/W

RθJC

Thermal Resistance, Junction-to-Case

(Note 1)

75

°C/W

FDN358

Rev:2023A2

1

SOT–23

1. GATE

2. SOURCE

3. DRAIN

VDS (V) = -30V

ID = -1.5 A

RDS(ON)

90m

(VGS = -10V)

RDS(ON)

150m

(VGS = -4.5V)

••

•

P−CHANNEL MOSFET

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